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SLOTTED PHOTOINTERRUPTER
Description
The MIT-5A116 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter.
2 14.0 (.551) 0.5 0.10 (.020) A 5.0 0.2 (.197) 1
MIT-5A116
Package Dimensions
Unit: mm ( inches )
4
3
0.8 (.031)
l l l l
For- direct pc board or Dual - in - line socket mounting Fast switching speed Choice of mounting configuration.
A-A SECTION 2.54 NOM (.100)
0.5 (.020)
10.3 0.3 (.406) 2- 0.7 0.1 (.028) 2.35 0.1 (.093) 6.6 0.1 (.260)
1.0 (.040) MIN
5.2 0.1
NOTE
1. Tolerance is 0.25 mm (.006") unless otherwise noted.
Absolute Maximum Ratings
@TA =25 oC Parameter Continuous Forward Current INPUT Reverse Voltage Power Dissipation Collector-emitter breakdown voltage OUTPUT Emitter-Collector breakdown voltage Collector power dissipation Total power dissipation Operating Temperature Range Storage Temperature Range Symbol IF VR Pad V(BR)CEO V(BR)ECO PC PTOT Topr Tstg Maximum Rating 50 5 75 30 5 75 100 -25 C to + 85 C -40oC to +100oC
o o
6.0 (.236)
(.205)
(.394)
l
10 MIN
Non -contact switching
0.7 (.028)
Features
A
7.5 0.3 (.295)
3.7 0.2
(.146)
10.0 (.394)
2.5 (.098)
Unit mA V mW V V mW mW
Unity Opto Technology Co., Ltd.
7.0 (.276)
04/01/2002
MIT-5A116
Optical-Electrical Characteristics
Parameter Input Forward Voltage Reverse Current Output Collector Dark Current Collector Emitter Collector Current Transfer ChaResponse Time (RISE) racteristics Response Time (FALL) Symbol VF IR Iceo VCE(SAT) Ic (on) tr tf Min. 0.5 Typ. 1.2 20 20 Max. 1.4 10 100 0.4 10 100 100 Unit. V IF =20mA @TA =25 oC Test Conditions
A VR =5V nA V mA S S Vce =10V Ic=0.1mA,Ee=0.1mW/cm2 IF =20mA, Vce =5V Ic=100A, Vce =5V RL =1k, d =1mm
Typical Optical-Electrical Characteristic Curves
Forward Current IF (mA)
50 40 30 20 10 0 -25 0 25 50 75 100
Power Dissipation (mW)
60
120 100 80 60 40 20 0 -25 0 25 50 75 100 PD , PC PTOT
Ambient Temperature TA Fig.1 forward Current VS. Ambient Temperature Forward Current IF (mA) Collector Current Ic (A)
100 80 60 40 20 0 0.8 1.2 1.6 2.0 2.4 2.8 700 600 500 400 300 200 100 0 0
Ambient Temperature TA ( oC ) Fig.2 Power Dissipation vs Ambient Temperature
Vce=2V Ta=25J
5
10
15
20
25
30
Relative Collector Current (%)
Forward Voltage VF (V) Fig.3 Forward Current VS Forward Voltage Collector Current Ic (A)
700 600 500 400 300 200 100 0 0 2 4 6 8 10 12 4mA IF=15mA 10mA Ta=25J 20mA
Forward Current IF (mA) Fig.4 Collector Current vs Forward Voltage
120 100 80 60 40 20 0 -25 0 25 50 75 100
Collector-Emitter Voltage Vce (V) Fig.5 Collector Current vs. Vce
Ambient Temperature TA ( oC ) Fig.6 Relative Collector Current VS. TA
Unity Opto Technology Co., Ltd.
04/01/2002
MIT-5A116
Typical Optical-Electrical Characteristic Curves
Collector Dark Current ICEO
10-6 10
-7
Response Time (s)
VCE=20V
1000 100 10 1
V CE =2V I C =100mA Ta=25 J
10
-8
10-9 10-10 0 25 50 75 100
0.1 0.01
0.1
1
10
100
Ambient Temperature TA ( oC ) Fig.7 Collector Dark Current vs. Ambient Temperature
Load Resistance Rt (K) Fig.8 Response Time vs. Load Resistance
100
Relative Sensitivity (%)
Ta=25J 80 60 40 20 0 700 Input 0 Output 0
Response Time Measurement Circuit
t
90 % 10 %
t tr tf IL VR Output VCC
800
900
1000
1100
1200
Input
Wavelength (nm) Fig.9 Spectral Sensitivity (Detecting side)
Sensing Position Characteristics (Typical)
X Y
I F =20mA V CE =5V I F =20mA V CE =5V Ta=25 o C
Relative light current IL (%)
100
Ta=25 o C
(Center of optical axis) 50 X Y 0 0 -3 -2 -1 0 1 2 3 -3 -2 -1 0 1 2 3 0 + +
Distance d (mm)
Unity Opto Technology Co., Ltd.
04/01/2002

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